AOZ8822DI-05

Marking：52；Package：DFN1006-3；2-Line Ultra Low Capacitance TVS Diode

Features «Ulirasmallpackage:1.040.6x0.5mm «Ultralowcapacitance:0.3pFtypical(1/0-1/0) «Ultralowleakage:nAlevel «Lowoperatingvoltage:5 «Lowclampingvoltage +3pinleadiesspackage «+Upto2ineprotects «Complieswithfollowingstandards: ~IEC610004-2(ESD)immunitytest A

BAV199TQ-7-F

Marking：52；Package：SOT523；SURFACE MOUNT LOW LEAKAGE DIODE

Features Ultra-SmallSurfaceMountPackage VeryLowLeakageCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBAV199TQissuitableforautomotiveapplications requiringspecificchangecontrol;thispartisAEC-Q10

BAV199TQ-7-F

Marking：52；Package：SOT523；SURFACE MOUNT LOW LEAKAGE DIODE

Features Ultra-SmallSurfaceMountPackage VeryLowLeakageCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBAV199TQissuitableforautomotiveapplications requiringspecificchangecontrol;thispartisAEC-Q10

BZX84-A3V0

Marking：52；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

DTA123Y

Marking：52；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

DTA123YE

Marking：52；Package：SOT-416；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesign

DTA123YE

Marking：52；Package：SOT-416；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesign

DTA123YE

Marking：52；Package：SOT-416；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors, R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdes

DTA123YEB

Marking：52；Package：SOT-416FL；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors, R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdes

DTA123YKA

Marking：52；Package：SOT-346；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesign