丝印：520；Package：LGA；Low-Noise Microphone with TDM Digital Output

文件：422.23 Kbytes 页数：20 Pages

TDK

东电化

丝印：520102001R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

文件：307.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：520102001R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

文件：307.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：520102002R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

文件：307.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：520102002R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features • 100 krad • Linear gain characteristics • Inductive load ruggedness Description The 2ST15300 is a power bipolar transistor able to operate under severe environment conditions and radiation exposure. It offers high reliability performance and immunity to the total ionizing dose (

文件：307.41 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：5203ISZ；Package：SOIC；400MHz Slew Enhanced VFAs

Features • Operates off 3V, 5V, or ±5V supplies • Power-down to 13μA (EL5202) • -3dB bandwidth = 400MHz • ±0.1dB bandwidth = 35MHz • Low supply current = 5mA per amplifier • Slew rate = 3500V/μs • Low offset voltage = 5mV max • Output current = 150mA • AVOL = 2000 • Differential gain/pha

文件：1.79575 Mbytes 页数：14 Pages

RENESAS

瑞萨

丝印：5203ISZ；Package：SOIC；400MHz Slew Enhanced VFAs

Features • Operates off 3V, 5V, or ±5V supplies • Power-down to 13μA (EL5202) • -3dB bandwidth = 400MHz • ±0.1dB bandwidth = 35MHz • Low supply current = 5mA per amplifier • Slew rate = 3500V/μs • Low offset voltage = 5mV max • Output current = 150mA • AVOL = 2000 • Differential gain/pha

文件：1.79575 Mbytes 页数：14 Pages

RENESAS

瑞萨

丝印：5203ISZ；Package：SOIC；400MHz Slew Enhanced VFAs

Features • Operates off 3V, 5V, or ±5V supplies • Power-down to 13μA (EL5202) • -3dB bandwidth = 400MHz • ±0.1dB bandwidth = 35MHz • Low supply current = 5mA per amplifier • Slew rate = 3500V/μs • Low offset voltage = 5mV max • Output current = 150mA • AVOL = 2000 • Differential gain/pha

文件：1.79575 Mbytes 页数：14 Pages

RENESAS

瑞萨

丝印：520000；Package：DSBGA；LP8552 High-Efficiency LED Backlight Driver For Notebooks

1 Features 1• High-Voltage DC/DC Boost Converter with Integrated FET with Four Switching Frequency Options: 156/312/625/1250 kHz • 2.7-V to 22-V Input Voltage Range to Support 1x…5x cell Li-Ion Batteries • Programmable PWM Resolution – 8 to 13 True Bit (Steady State) – Additional 1 to 3 Bi

文件：1.06584 Mbytes 页数：49 Pages

TI

德州仪器

丝印：520000；Package：DSBGA；LP8552 High-Efficiency LED Backlight Driver For Notebooks

1 Features 1• High-Voltage DC/DC Boost Converter with Integrated FET with Four Switching Frequency Options: 156/312/625/1250 kHz • 2.7-V to 22-V Input Voltage Range to Support 1x…5x cell Li-Ion Batteries • Programmable PWM Resolution – 8 to 13 True Bit (Steady State) – Additional 1 to 3 Bi

文件：1.06584 Mbytes 页数：49 Pages

TI

德州仪器