2N3810RKT

Marking：520700511R；Package：Flat-8；Rad-Hard 60 V, 0.05 A PNP dual matched transistor

Features •Hermeticpackages •ESCCandJANSqualified •Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero

2ST15300RSRHRG

Marking：520102001R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features •100krad •Lineargaincharacteristics •Inductiveloadruggedness Description The2ST15300isapowerbipolartransistorabletooperateundersevere environmentconditionsandradiationexposure.Itoffershighreliabilityperformance andimmunitytothetotalionizingdose(

2ST15300RSRHRGW

Marking：520102001R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features •100krad •Lineargaincharacteristics •Inductiveloadruggedness Description The2ST15300isapowerbipolartransistorabletooperateundersevere environmentconditionsandradiationexposure.Itoffershighreliabilityperformance andimmunitytothetotalionizingdose(

2ST15300RSRHRT

Marking：520102002R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features •100krad •Lineargaincharacteristics •Inductiveloadruggedness Description The2ST15300isapowerbipolartransistorabletooperateundersevere environmentconditionsandradiationexposure.Itoffershighreliabilityperformance andimmunitytothetotalionizingdose(

2ST15300RSRHRTW

Marking：520102002R；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features •100krad •Lineargaincharacteristics •Inductiveloadruggedness Description The2ST15300isapowerbipolartransistorabletooperateundersevere environmentconditionsandradiationexposure.Itoffershighreliabilityperformance andimmunitytothetotalionizingdose(

CDBAS5150-HF

Marking：520S；Package：DO-214AC；SMD Schottky Barrier Rectifiers

-Built-instrainrelief. -Metalsiliconjunctionwithguardring. Features -Siliconepitaxialplanarchips. -Foruseinlowvoltage,highfrequencyinverters freewheelingandpolarityprotection. -Highsurgeandcurrentcapability.

EL5203ISZ

Marking：5203ISZ；Package：SOIC；400MHz Slew Enhanced VFAs

Features •Operatesoff3V,5V,or±5Vsupplies •Power-downto13μA(EL5202) •-3dBbandwidth=400MHz •±0.1dBbandwidth=35MHz •Lowsupplycurrent=5mAperamplifier •Slewrate=3500V/μs •Lowoffsetvoltage=5mVmax •Outputcurrent=150mA •AVOL=2000 •Differentialgain/pha

EL5203ISZ-T13

Marking：5203ISZ；Package：SOIC；400MHz Slew Enhanced VFAs

Features •Operatesoff3V,5V,or±5Vsupplies •Power-downto13μA(EL5202) •-3dBbandwidth=400MHz •±0.1dBbandwidth=35MHz •Lowsupplycurrent=5mAperamplifier •Slewrate=3500V/μs •Lowoffsetvoltage=5mVmax •Outputcurrent=150mA •AVOL=2000 •Differentialgain/pha

EL5203ISZ-T7

Marking：5203ISZ；Package：SOIC；400MHz Slew Enhanced VFAs

Features •Operatesoff3V,5V,or±5Vsupplies •Power-downto13μA(EL5202) •-3dBbandwidth=400MHz •±0.1dBbandwidth=35MHz •Lowsupplycurrent=5mAperamplifier •Slewrate=3500V/μs •Lowoffsetvoltage=5mVmax •Outputcurrent=150mA •AVOL=2000 •Differentialgain/pha

ISZ520N20NM6

Marking：520N20N；Package：PG-TSDSON-8FL；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61