DTA123YKA

Marking：52；Package：SOT-346；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors, R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdes

DTA123YKA

Marking：52；Package：SOT-346；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesign

DTA123YM

Marking：52；Package：SOT-723；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors, R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdes

DTA123YUA

Marking：52；Package：SOT-323；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors, R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdes

DTA123YUA

Marking：52；Package：SOT-323；PNP -100mA -50V Digital Transistor

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesign

DTA123YUA

Marking：52；Package：SOT-323；Digital transistors (built-in resistors)

Features 1)Built-InBiasingResistors,R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobesetforoperation,makingthecircuitdesign

DTA123YUB

Marking：52；Package：SOT-323FL；PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)

lFeatures 1)Built-InBiasingResistors, R1=2.2kΩ,R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdes

ESD5302N

Marking：52；Package：DFN1006-3；2-Line Ultra Low Capacitance TVS Diode

Features «Ulirasmallpackage:1.040.6x0.5mm «Ultralowcapacitance:0.3pFtypical(1/0-1/0) «Ultralowleakage:nAlevel «Lowoperatingvoltage:5 «Lowclampingvoltage +3pinleadiesspackage «+Upto2ineprotects «Complieswithfollowingstandards: ~IEC610004-2(ESD)immunitytest A

MT6L75FS

Marking：52；Package：fS6；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

PBSS4160U

Marking：52；Package：SC-70；60 V, 1 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors