AP2125KS-3.3TRG1

Marking：B8；Package：SC-70-5；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features -ExcellentRippleRejection:70dBTypical(1.8VVersion) -LowDropoutVoltage:65mV(IOUT=100mA,3.3VVersion) -LowStandbyCurrent:0.01μATypical -LowQuiescentCurrent:60μATypical -ExtremelyLowNoise:50μVrmsTypical -MaximumOutputCurrent:300mA(Min.) -HighOutputV

BZT52H-C3V9

Marking：B8；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

BZT52H-C3V9-Q

Marking：B8；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

BZX84C2V2

Marking：B8；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

BZX84-C56

Marking：B8；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84-C56-Q

Marking：B8；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX884-C4V7

Marking：B8；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:Ptot≤250mW •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotolerance

CDBQC0140L-HF

Marking：B8；Package：SOD-923F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction.

D5V0H1B2LP

Marking：B8；Package：DFN1006-2；1-Line Bi-directional ESD DIODE

Features @Lowoperatingvoltage:5V oUltralowcapacitance:60pF oUltralowleakage:nAlevel @Lowclampingvoltage @—IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:+30kV —IEC61000-4-4(EFT)40A(5/50ns) —IEC61000-4-5(Lightning)30A(8/20ps)

LMUN5212T3G

Marking：B8；Package：SOT-323；Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

BiasResistorTransistor NPNSiliconSurfaceMountTransistor withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonoli