丝印：B8；Package：SOT-26；60 V 1 A NPN/NPN low VCEsat (BISS) transistor

General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

文件：154.36 Kbytes 页数：14 Pages

PHI

飞利浦

丝印：B8；Package：SC-74；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：329.95 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

文件：216.47 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifi;

Nexperia

安世

60 V, 1 A NPN/NPN low VCEsat transistor

NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accord;

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS 2NPN 60V 1A SC-74

Nexperia USA Inc.