BSS84AKQB

Marking：B9；Package：DFN1110D-3；50 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits •Logic-levelcompatible •Sidewettableflanksforoptical

BZT52H-C4V3

Marking：B9；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

BZT52H-C4V3-Q

Marking：B9；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

BZX84C10

Marking：B9；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

BZX84-C62

Marking：B9；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX84-C62-Q

Marking：B9；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BZX884-C5V1

Marking：B9；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:Ptot≤250mW •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotolerance

EMB9

Marking：B9；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.

EMB9

Marking：B9；Package：EMT6；General purpose dual digital transistors

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.

IMB9A

Marking：B9；Package：SMT6；General purpose dual digital transistors

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.