丝印：B97；Package：SOT-23；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：239.95 Kbytes 页数：5 Pages

PANJIT

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丝印：B97；Package：SOT-23；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：239.95 Kbytes 页数：5 Pages

PANJIT

強茂