IMB9A

Marking：B9；Package：SMT6；General purpose (dual digital transistors)

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.

MM5Z36

Marking：B9；Package：SOD-553；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

PDZ5.1BGW

Marking：B9；Package：SOD123；Single Zener diodes in a SOD123 package

1.1Generaldescription General-purposeZenerdiodesinaSOD123smallSurface-MountedDevice(SMD) plasticpackage. 1.2Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤365mW •Toleranceseries: B2:approximately±2 •

PMEG3020ER

Marking：B9；Package：CFP3；30 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤

PMEG3020ER-Q

Marking：B9；Package：CFP3；30 V, 2 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithanintegrated guardringforstressprotection,encapsulatedinaSOD123WsmallandflatleadSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Averageforward

PTVS33VP1UP

Marking：B9；Package：SOD128；600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

PTVS33VP1UP-Q

Marking：B9；Package：SOD128；600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=600W •Reversestandoffvolta

PUMB20

Marking：B9；Package：SOT363；PNP/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

1.1Generaldescription PNP/PNPresistor-equippedtransistors 1.2Features nBuilt-inbiasresistors nSimplifiescircuitdesign nReducescomponentcount nReducespickandplacecost 1.3Applications nLowcurrentperipheraldriver nControlofICinputs nReplacementofgeneral-purpos

PUMB9

Marking：B9；Package：TSSOP6；50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ

1.Generaldescription PNP/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PUMD9 NPN/NPNcomplement:PUMH9 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors

PUMB9

Marking：B9；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified