丝印：B8XX；Package：SOT-363；50-4000 MHz Wideband Low Nosie Amplifier

Device Features • This can be operated at Vd of 3.0V • N.F = 0.78 dB @ 1850MHz at Demo board • 31.5 dBm Output IP3 at 0dBm/tone at 1850MHz • 15.6 dB Gain at 1850MHz • 17.7 dBm P1dB at 1850 MHz • Green/RoHS2 Compliant SOT-363 SMT Package Product Description BeRex’s BL083 is a high perform

文件：820.22 Kbytes 页数：16 Pages

BEREX

丝印：B8XX；Package：DFN8L；2000 – 7000 MHz High Gain LNA

Device Features • Operated at 5.0V • 33.0dBm Output IP3 at 0dBm/tone at 3600MHz • 21.5dB Gain at 3600MHz • 20.3dBm P1dB at 3600MHz • 0.69dB NF at 3600MHz • Fast shut down to support TDD systems • Lead-free/Green/RoHS Compliant DFN8 2x2 Package Product Description BeRex’s BLB28 is a high

文件：1.4957 Mbytes 页数：16 Pages

BEREX

丝印：B8XX；Package：TSOP6；Dual N-Ch Fast Switching MOSFETs

Description The FKQ2720 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This product is suitable for Lithium-ion battery pack applications. The FKQ2720 meet the RoHS and Green Product requirement with full function reliability approved.

文件：696.78 Kbytes 页数：6 Pages

FETEK

台湾东沅