MM5Z3V0

Marking：B8；Package：SOD-527；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

PBSS4160DS

Marking：B8；Package：SOT-26；60 V 1 A NPN/NPN low VCEsat (BISS) transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PBSS4160DS

Marking：B8；Package：SC-74；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PDZ4.7BGW

Marking：B8；Package：SOD123；Single Zener diodes in a SOD123 package

1.1Generaldescription General-purposeZenerdiodesinaSOD123smallSurface-MountedDevice(SMD) plasticpackage. 1.2Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤365mW •Toleranceseries: B2:approximately±2 •

PMEG3010BER

Marking：B8；Package：CFP3；30 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤1A •Reversevoltage:VR≤

PMEG3010BER-Q

Marking：B8；Package：CFP3；30 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤1A •Reversevoltage:VR≤

PTVS30VP1UP

Marking：B8；Package：SOD128；600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

PTVS30VP1UP-Q

Marking：B8；Package：SOD128；600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=600W •Reversestandoffvolta

PUMB17

Marking：B8；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = 22 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecost

PUMB18

Marking：B8；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified