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MM5Z3V0

Marking:B8;Package:SOD-527;Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

FS

First Silicon Co., Ltd

PBSS4160DS

Marking:B8;Package:SOT-26;60 V 1 A NPN/NPN low VCEsat (BISS) transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PBSS4160DS

Marking:B8;Package:SC-74;60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PDZ4.7BGW

Marking:B8;Package:SOD123;Single Zener diodes in a SOD123 package

1.1Generaldescription General-purposeZenerdiodesinaSOD123smallSurface-MountedDevice(SMD) plasticpackage. 1.2Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:PZSM≤40W •Totalpowerdissipation:Ptot≤365mW •Toleranceseries: B2:approximately±2 •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMEG3010BER

Marking:B8;Package:CFP3;30 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤1A •Reversevoltage:VR≤

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PMEG3010BER-Q

Marking:B8;Package:CFP3;30 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤1A •Reversevoltage:VR≤

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PTVS30VP1UP

Marking:B8;Package:SOD128;600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PTVS30VP1UP-Q

Marking:B8;Package:SOD128;600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=600W •Reversestandoffvolta

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PUMB17

Marking:B8;Package:SC-88;PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = 22 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecost

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PUMB18

Marking:B8;Package:SC-88;PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    B8

  • 制造商:

    Schneider Electric

  • 功能描述:

    THERMAL UNIT

供应商型号品牌批号封装库存备注价格
群鑫
22+
D3K
30000
原装正品 一级代理
询价
JST
2022
连接器
10000
全新、原装
询价
DYNATRON CORP
23+
SMD
880000
明嘉莱只做原装正品现货
询价
MPS/美国芯源
22+
QFN
25000
只做原装,原装,假一罚十
询价
JST/日压
2508+
/
226570
一级代理,原装现货
询价
LRC/乐山无线电
23
S0D323
15000
全新原装现货 价格优势
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TI/德州仪器
23+
SON
50000
全新原装正品现货,支持订货
询价
TI/德州仪器
24+
NA/
3387
原装现货,当天可交货,原型号开票
询价
ROHM/罗姆
23+
B
6500
专注配单,只做原装进口现货
询价
TI
25+
SON
137
原装正品,假一罚十!
询价
更多B8供应商 更新时间2025-7-6 9:31:00