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PBSS4160DPN

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Generaldescription NPN/PNPlowVCEsat(BISS)transistorpairinaSOT457(SC-74)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highefficiency,reducesheatgeneration ■Reducesprinted-circuitboardarearequire

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PBSS4160DPN

Marking:B4;Package:SC-74;60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160DPN_15

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PBSS4160DS

60V1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorpairinaSOT457(SC-74)SurfaceMountedDevice(SMD)plasticpackage. PNPcomplement:PBSS5160DS. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapability:ICandICM

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PBSS4160DS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PAN

60V,1ANPN/NPNlowVCEsat(BISS)transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4160PANP.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PANP

60V,1ANPN/PNPlowVCEsat(BISS)transistor

1.Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpower DFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PBSS4160PAN.PNP/PNPcomplement:PBSS5160PAP. 2.Featuresandbenefits •Verylowcollect

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PANPS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessmediumpowerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. NPN/NPNcomplement:PBSS4160PANS.PNP/PNPcomplement:PBSS5160PAPS. Features

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160PANS

60V,1ANPN/NPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBSS4160QA

60V,1ANPNlowVCEsat(BISS)transistor

1.Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmall DFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisible andsolderablesidepads. PNPcomplement:PBSS5160QA. 2.Featuresandbenefits •Verylowcollector-

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    PBSS4160DPN

  • 功能描述:

    两极晶体管 - BJT LO VCESAT(BISS)TRANS TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
NEXPERIA
21+
7500
只做原装正品!现货库存!可开13点增值税票
询价
恩XP
24+
标准封装
8548
全新原装正品/价格优惠/质量保障
询价
恩XP
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
恩XP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
恩XP
24+
6-TSOP
115
询价
恩XP
23+
SOT23-6
60000
原装正品,假一罚十
询价
Nexperia
24+
NA
3704
进口原装正品优势供应
询价
恩XP
23+
NA
60315
专做原装正品,假一罚百!
询价
恩XP
1948+
SOT23-6
6852
只做原装正品现货!或订货假一赔十!
询价
NEXPERIA/安世
24+
NA
21000
原装现货,专业配单专家
询价
更多PBSS4160DPN供应商 更新时间2025-7-23 16:10:00