MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：362.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D9N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.82 m, 330 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：362.94 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D9N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：372.1 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：361.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D0N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.92 m, 300 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：361.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：374.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D2N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.2 m, 237 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：374.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：376.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体