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NVMFWS0D5N04XM

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件:223.1 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D5N04XMT1G

丝印:0D5N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.52 m, 423 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件:223.1 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D6N04XM

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Bat

文件:153.36 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D6N04XMT1G

丝印:0D6N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.57 m, 380 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Bat

文件:153.36 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D7N04XM

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件:278.85 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D7N04XMT1G

丝印:0D7N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件:278.85 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D9N04XM

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件:301.54 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS0D9N04XMT1G

丝印:0D9N4W;Package:DFN5;MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件:301.54 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS1D1N04XM

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件:149.14 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

NVMFWS1D1N04XMT1G

丝印:1D1N4W;Package:DFNW5;MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.05 m, 233 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件:149.14 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

技术参数

  • 输入电压范围[AC]:

    90~264Vac

  • 效率:

    90% Typ.

  • 额定输出电压[DC]:

    12Vdc

  • 输出电压范围[DC]:

    固定

  • 最大输出电流:

    15A

  • 最大输出功率:

    180W

供应商型号品牌批号封装库存备注价格
ON/安森美
21+
NA
6000
只做原装,一定有货,不止网上数量,量多可订货!
询价
ITT
24+
DIP
1700
原装现货假一罚十
询价
ON
17+
DFN8
6200
100%原装正品现货
询价
24+
DIP
3000
公司存货
询价
ONSEMICON
23+
NA
2946
专做原装正品,假一罚百!
询价
ON
12+PBF
QFN8
21000
现货
询价
ON
25+23+
DFN8
20018
绝对原装正品全新进口深圳现货
询价
ON/安森美
21+
SOIC-8
10000
原装现货假一罚十
询价
ON
24+
SMD
12000
原厂/代理渠道价格优势
询价
ITT
24+
DIP8
5000
只做原装公司现货
询价
更多NVM供应商 更新时间2025-11-29 14:19:00