First PowerDI8080-Packaged 40V MOSFET Delivers Industry-Leading Performance

Applications High-power DC-DC converters EV charging systems High-power BLDC motor controls

文件：674.47 Kbytes 页数：2 Pages

DIODES

美台半导体

MOSFET ??Power, Single N-Channel 40 V, 0.63 m, 433 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：363.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.63 m, 433 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：363.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated Option for Enhanced Optical Inspection •

文件：359.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

文件：394.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06CL；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.68 m, 477 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Option for Enhanced Optical Inspection • These D

文件：394.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N06C；Package：DFNW8；MOSFET - Power, Single N-Channel 60 V, 0.72 m, 464 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：357.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • New Power 88 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：247.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D0N04CL；Package：TDFNW8；MOSFET - Power, Single N-Channel, Logic Level 40 V, 1.0 m, 291 A

Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • New Power 88 Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：247.07 Kbytes 页数：7 Pages

ONSEMI

安森美半导体