MOSFET - Power, Single N-Channel 40 V, 1.1 m, 277 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：321.47 Kbytes 页数：8 Pages

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安森美半导体

丝印：1D1N04C；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 1.1 m, 277 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：321.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D6N10MC；Package：POWER88；MOSFET - Power, Single N-Channel 100 V, 1.7 m, 273 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：324.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFNW8 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：300.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFNW8 150 V, 6.4 m, 128 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：297.83 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Dual Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • Wettable Flank Pl

文件：423.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N08M；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Dual Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • Wettable Flank Pl

文件：423.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, TDFNW8 DUAL COOL 150 V, 4.45 m, 165 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：337.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：269.15 Kbytes 页数：7 Pages

ONSEMI

安森美半导体