丝印：001N06C；Package：DFNW8；MOSFET ??Power, Single N-Channel 60 V, 0.91 m, 376 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：400.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

文件：386.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

文件：401.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D4N04CL；Package：POWER88；MOSFET - Power, Single N-Channel 40 V, 0.4 m, 553.8 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Powe

文件：401.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D4N04C；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.45 m, 558 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Co

文件：386.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：382.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.42 m, 554.5 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre

文件：407.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04CL；Package：POWER88；MOSFET ??Power, Single N-Channel 40 V, 0.42 m, 554.5 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre

文件：407.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D6N04C；Package：DFNW8；MOSFET ??Power, Single N-Channel 40 V, 0.48 m, 533 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Plated for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：382.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated Option for Enhanced Optical Inspection •

文件：359.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体