MOSFET - Power, Single N-Channel 40 V, 1.65 m, 314 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：194.52 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 314 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：194.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 319 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：197.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 80 V, 2.8 m, 131.5 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package (TCPAK10) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：316.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：2D68H；Package：TCPAK10；MOSFET – Power, Single N-Channel 80 V, 2.8 m, 131.5 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package (TCPAK10) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：316.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant

文件：195.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：3D34C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 3.3 m, 157 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free and are RoHS Compliant

文件：195.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 0.91 m, 376 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Fr

文件：400.42 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：401.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：001N06CL；Package：DFNW8；MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Power 88 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These D

文件：401.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体