丝印：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 314 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：194.52 Kbytes 页数：7 Pages

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丝印：1D64C；Package：TCPAK57；MOSFET - Power, Single N-Channel 40 V, 1.65 m, 319 A

Features  Small Footprint (5x7 mm) for Compact Design  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  TCPAK57 5x7 Top Cool Package  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：197.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体