丝印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：256.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：255.65 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：253.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：373.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D8N04CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 0.72 m, 368 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：373.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：372.1 Kbytes 页数：7 Pages

ONSEMI

安森美半导体