MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：148.22 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：148.22 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

文件：164.26 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 m, 253 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC Qualified and PPAP Capable  These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications  Synchronous Rectification (

文件：164.26 Kbytes 页数：7 Pages

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安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications • Synchronous Rectification

文件：168.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 m, 201 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Fre e and are RoHS Compliant Applications • Synchronous Rectification

文件：168.79 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  Synchronous Rectificat

文件：258.92 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 2.1 m, 181 A

Features  Low QRR, Soft Recovery Body Diode  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitance to Minimize Driver Losses  AEC−Q101 Qualified and PPAP Capable  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  Synchronous Rectificat

文件：258.92 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2.35 m, 121 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：146.07 Kbytes 页数：7 Pages

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安森美半导体

丝印：2D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2.35 m, 121 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

文件：146.07 Kbytes 页数：7 Pages

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安森美半导体