丝印：6H824N；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 4.5 m, 107 A

文件：185.68 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 4.5 m, 107 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H824NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

文件：5.93017 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

DFN-8

ON

上传：深圳市宝隆宏业科技有限公司

SOP8

ON

上传：深圳市昊创电子有限公司