N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, 61A, 10mΩ

This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. •Dual Cool™ Top Side Cooling PQFN package\n• Improved package thermal capability\n• Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 10 A\n• Reduces conduction loss\n•High performance technology for extremely low rDS(on)\n• improves System efficiency\n•100% UIL Tested\n• Robust Trench Technology\n•RoHS C;

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MOSFET - Power, Single N-Channel

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