MOSFET, Power, Single, N-Channel, Source-Down, TDFN9,  60V, 1.5mΩ, 235A

MOSFET, Power, Single, N-Channel, Source-Down, TDFN9,  60V, 1.5mΩ, 235A • Low RDS(on) to Minimize Conduction Losses\n• Higher Power Density, Improved Thermal Performance, and Higher Efficiency\n• Low QG and Capacitance to Minimize Driver Losses\n• Minimize Driver Losses\n• Small Footprint (5x6 mm) for Compact Design\n• These Devices are Pb−Free, Halogen−Free / BFR Free ;

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丝印：1D5N06；Package：TDFN9；MOSFET - Power, Single N-Channel, Source-Down TDFN9 60 V, 1.5 m, 235 A

文件：258.86 Kbytes 页数：6 Pages

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MOSFET - Power, Single N-Channel, D2PAK7 60 V, 1.55 m, 267 A

文件：230.52 Kbytes 页数：7 Pages

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SOP8

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