MOSFET - Power, Single N‐Channel, STD Gate, DUAL COOL, DFN8 5x6 60 V, 1.1 m, 302 A

Features • Advanced Dual-Side Cool Package with Enhanced Heat-Dissipation Molding Compound • Optimized for Smoother Switching • Low RDS(on) to Minimize Conduction Losses • Low Qg to Minimize Gate Driving Losses • MSL1 Robust Packaging Design • These Devices are Pb-Free, Halogen Free/BFR Fre

文件：292.62 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N‐Channel, STD Gate, DUAL COOL, DFN8 5x6 60 V, 1.1 m, 302 A

Features • Advanced Dual-Side Cool Package with Enhanced Heat-Dissipation Molding Compound • Optimized for Smoother Switching • Low RDS(on) to Minimize Conduction Losses • Low Qg to Minimize Gate Driving Losses • MSL1 Robust Packaging Design • These Devices are Pb-Free, Halogen Free/BFR Fre

文件：292.62 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SOP8

ON

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SMD

ON/安森美

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SOT883

ON

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