Power MOSFET 30 V, 18 A, N?묬hannel, SO??

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ONSEMI

安森美半导体

Power MOSFET 30 V, 18 A, N?묬hannel, SO??

文件：116.94 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 30V, 18A, 4mΩ

Power MOSFET 30V 18A 4 mOhm Single N-Channel SO-8 • Low RDS(on) to Minimize Conduction Losses\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses;

ONSEMI

安森美半导体

solid state crowbar devices

Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures

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TECCOR

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

文件：154.18 Kbytes 页数：3 Pages

LITTELFUSE

力特

Two-chip SIDACtor

Two-chip SIDACtor® Device The two-chip SIDACtor design provides a through-hole technology protection solution. It is intended for telecom applications that do not require a balanced solution. For primary protection applications, devices with higher holding current and integrated failsafe options

文件：154.18 Kbytes 页数：3 Pages

LITTELFUSE

力特