N-Channel Dual CoolTM 56 PowerTrench® MOSFET 80V, ___A, 4.0mΩ

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re •Dual Cool™ Top Side Cooling PQFN package\n• improved thermals\n•High performance technology for extremely low rDS(on)\n• low conduction and switching losses\n• Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 44 A\n• Max rDS(on) = 8.5 mΩ at VGS = 6 V, ID = 22 A\n•100% UIL Tested\n•RoHS Compliant;

ONSEMI

安森美半导体

丝印：4N08MC；Package：DFN8；MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 80 V, 4.0 m, 136 A

文件：407.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel Shielded Gate PowerTrench MOSFET

文件：1.19227 Mbytes 页数：9 Pages

ONSEMI

安森美半导体

DFN-8

ON

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SOP8

ON

上传：深圳市昊创电子有限公司