N-Channel Shielded Gate PowerTrench® MOSFET 150V, 95.6A, 7.9mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • Shielded Gate MOSFET Technology\n•Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A\n• Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A\n•Lowers Switching Noise/EMI\n•MSL1 Robust Package Design\n•100% UIL Tested\n•RoHS Compliant;

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丝印：7D515M；Package：PQFN8；MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.9 m, 95.6 A

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