MOSFET - Power, Dualcool N-Channel, PQFN8, 150V, 11.4mΩ, 80A

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal re •Dual Cool™ Top Side Cooling PQFN package\n• Optimized for Low RDS-on and Qg\n• Max rDS(on) = 11.4 mΩ at VGS = 10 V, ID = 44 A\n• Low Conduction Loss\n• Max rDS(on) = 14.5 mΩ at VGS = 8 V, ID = 22 A\n•High performance technology for extremely low rDS(on)\n•100% UIL Tested\n•RoHS Compliant;

ONSEMI

安森美半导体

丝印：12N15M；Package：PQFN8；MOSFET - Power, Dualcool N-Channel, PQFN8 150 V, 11.4 m, 80 A

文件：280 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

DFN-8

ON

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SOP8

ON

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SMD

ON/安森美

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