MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous

文件：418 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous

文件：418 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：156.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary

文件：156.7 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON)

文件：1.69462 Mbytes 页数：5 Pages

KEXIN

科信电子

Power MOSFET -10 Amps, -20 Volts P?묬hannel Enhancement?묺ode Single SO?? Package

MOSFET – Power, Single, P-Channel, Enhancement Mode, SOIC-8 -10 Amps, -20 Volts Features • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature SOIC−8 Surface Mount Package • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified

文件：92.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Sw

文件：1.025819 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-channel Enhancement Mode Power MOSFET

Features VDS= -30V, ID= -5.1A RDS(ON)

文件：1.50867 Mbytes 页数：5 Pages

Bychip

百域芯

丝印：4177P；Package：SOP-8；-30V P-Channel MOSFET

•Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •SOP-8 Surface Mount Package Saves Board Space VDS (V) = -30V ID = -11.4A (VGS = -10V) RDS(ON)

文件：377.1 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：4177P；Package：SOP-8；-30V P-Channel MOSFET

•Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •SOP-8 Surface Mount Package Saves Board Space VDS (V) = -30V ID = -11.4A (VGS = -10V) RDS(ON)

文件：377.1 Kbytes 页数：6 Pages

UMW

友台半导体