MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

文件：231.88 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：4D0N08；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

文件：231.88 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

MOSFET – Power, Single, N-Channel 40 V, 2.0 mΩ, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：130.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

MOSFET – Power, Single, N-Channel 40 V, 2.0 mΩ, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：130.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

MOSFET – Power, Single, N-Channel 40 V, 2.0 mΩ, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：130.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：178.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C612N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：178.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：85.49 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：85.49 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：85.49 Kbytes 页数：6 Pages

ONSEMI

安森美半导体