Single N-Channel Field Effect Transistor

MOSFET – Power, Single, N-Channel 40 V, 2.0 mΩ, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：130.97 Kbytes 页数：6 Pages

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安森美半导体

Power MOSFET

文件：89.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

MOSFET – Power, Single, N-Channel 40 V, 2.0 mΩ, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：130.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

MOSFET – Power, Single, N-Channel 40 V, 2.0 mΩ, 150 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：130.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：89.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：89.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：89.28 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ

Power MOSFET 40 V, 150 A, 2.0mΩ, Single N−Channel • Low RDS(on)\n• Minimize conduction losses\n• Low Input Capacitance\n• Minimize switching losses\n• Maximum junction temperature of 175C\n• Offers a wider design margin for thermally challenged applications\n• RoHS Compliant;

ONSEMI

安森美半导体