NTMFS5C670NL数据手册供应商报价ONSEMI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NTMFS5C670NL	文件：85.49 Kbytes Page：6 Pages	Single N-Channel Field Effect Transistor Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant 文件：85.49 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS5C670NLT1G	文件：85.49 Kbytes Page：6 Pages	Single N-Channel Field Effect Transistor Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant 文件：85.49 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS5C670NLT3G	文件：85.49 Kbytes Page：6 Pages	Single N-Channel Field Effect Transistor Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant 文件：85.49 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS5C670NL	文件：300 bytes Page：1 Pages	单 N 沟道功率 MOSFET 60V，68A，6.7mΩ Power MOSFET 60 V, 6.7 m\u0002, 68 A, Single N−Channel • Low RDS(on)\n• Minimize conduction losses\n• Low input capacitance\n• Minimize switching losses\n• RoHS Compliant;	ONSEMI 安森美半导体	ONSEMI

更多NTMFS5C670NL供应商更新时间2026-2-4 15:00:00