MOSFET – Power, Single,N-Channel 60 V, 10 m, 44 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5H610L；Package：DFN5；MOSFET – Power, Single,N-Channel 60 V, 10 m, 44 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel 60 V, 7.2 m, 61 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：207.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5H663L；Package：DFN5；MOSFET – Power, Single, N-Channel 60 V, 7.2 m, 61 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：207.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78 m, 310 A

Features • Advanced Dual−Sided Cooling Package • Latest 40 V Power MOSFET Technology for Motor Drive Applications • Extreme Lower On−Resistance to Minimize Conduction Losses • Lower Gate Charge to Minimize Gate Driving and Switching Losses • Soft Body Diode Reverse Recovery • These Devices

文件：247.22 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

丝印：3R；Package：DFN8；MOSFET - Power, Single N-Channel, DUAL COOL 40 V, 0.78 m, 310 A

Features • Advanced Dual−Sided Cooling Package • Latest 40 V Power MOSFET Technology for Motor Drive Applications • Extreme Lower On−Resistance to Minimize Conduction Losses • Lower Gate Charge to Minimize Gate Driving and Switching Losses • Soft Body Diode Reverse Recovery • These Devices

文件：247.22 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−sided Cooled Packaging • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectifier • DC−DC Conversion • Oring FET and Load Switching

文件：409.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−sided Cooled Packaging • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Applications • Synchronous Rectifier • DC−DC Conversion • Oring FET and Load Switching

文件：409.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectific

文件：423.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：3W；Package：DFN85x6；MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features • Advanced Dual−Sided Cooled Packaging • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectific

文件：423.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体