丝印：5H610L；Package：DFN5；MOSFET – Power, Single,N-Channel 60 V, 10 m, 44 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：223.36 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5H610L；Package：DFN5；Power MOSFET 60 V, 10 m, 48 A, Single N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：170.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体