丝印：5H663L；Package：DFN5；MOSFET – Power, Single, N-Channel 60 V, 7.2 m, 61 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

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丝印：5H663L；Package：DFN5；MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：185.44 Kbytes 页数：8 Pages

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安森美半导体