Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL

Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D

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Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Deliver

文件：165.58 Kbytes 页数：8 Pages

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安森美半导体

Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Deliver

文件：165.58 Kbytes 页数：8 Pages

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Single N?묬hannel Power MOSFET

Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are

文件：112.72 Kbytes 页数：7 Pages

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Single N?묬hannel Power MOSFET

Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are

文件：112.72 Kbytes 页数：7 Pages

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Single N?묬hannel Power MOSFET

Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are

文件：112.72 Kbytes 页数：7 Pages

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Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

文件：115.24 Kbytes 页数：7 Pages

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安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

文件：115.24 Kbytes 页数：7 Pages

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安森美半导体

Single N?묬hannel Power MOSFET

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

文件：115.24 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free

文件：120.9 Kbytes 页数：7 Pages

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