Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFETPower MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：654.07 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFETPower MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：654.07 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Dual, N-Channel, Power Clip, POWERTRENCH, Asymmetric 25 V

Features • Small Footprint (5x6mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These are Pbïfree, Halogen Free / BFR Free and are RoHS Compliant Typical Applications • DCïDC Converters • System Voltage Rails

文件：386.35 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：217.25 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：0D4N4；Package：DFN5；MOSFET - Power, Single N-Channel, SO8-FL 40 V, 0.42 m, 509 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：217.25 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Logic Level, SO-8FL 40 V, 0.49 m, 455 A

Features • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Loss • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • High Switc

文件：137.39 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D5N4L；Package：DFNW5；MOSFET - Power, Single N-Channel, Logic Level, SO-8FL 40 V, 0.49 m, 455 A

Features • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Loss • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • High Switc

文件：137.39 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0D7N4L；Package：DFN5；MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体