NTMFSC1D9N08XTWG

Marking：3W；Package：DFN85x6；MOSFET – Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features •AdvancedDual−SidedCooledPackaging •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •SynchronousRectific

NTMFSC2D6N08X

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features •AdvancedDual−SidedCooledPackaging •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •Synchronous

NTMFSC2D6N08XTWG

MOSFET - Power, Single N-Channel, STD Gate, DUAL COOL DFN8 5x6

Features •AdvancedDual−SidedCooledPackaging •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •Synchronous

NTMFWS1D5N08X

MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications •SynchronousRectification(SR)inDC−DCandAC−DC •Primary

NTMFWS1D5N08XT1G

Marking：1D5N08；Package：DFNW5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL-HEFET 80 V, 1.5 m, 247 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,Halogen−Free/BFR−FreeandareRoHSCompliant Applications •SynchronousRectification(SR)inDC−DCandAC−DC •Primary

NTMS10P02R2

Power MOSFET -10 Amps, -20 Volts P?묬hannel Enhancement?묺ode Single SO?? Package

MOSFET–Power,Single,P-Channel,EnhancementMode,SOIC-8-10Amps,-20Volts Features •UltraLowRDS(on) •HigherEfficiencyExtendingBatteryLife •LogicLevelGateDrive •MiniatureSOIC−8SurfaceMountPackage •DiodeExhibitsHighSpeed,SoftRecovery •AvalancheEnergySpecified

NTMS10P02R2

P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-10A(VGS=-10V) ●RDS(ON)

NTMS10P02R2G

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •BuiltinESDProtectionwithZenerDiode •TypicalESDPerformance:1800V •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableDevices -LoadSwitch -BatterySw

NTMS3P03R2G

P-channel Enhancement Mode Power MOSFET

Features VDS=-30V,ID=-5.1A RDS(ON)

NTMS4177

Marking：4177P；Package：SOP-8；-30V P-Channel MOSFET

•LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •OptimizedGateChargetoMinimizeSwitchingLosses •SOP-8SurfaceMountPackageSavesBoardSpace VDS(V)=-30V ID=-11.4A(VGS=-10V) RDS(ON)