| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOSFET - Power, Single N-Channel, STD Gate, SO8FL Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(5x6mm)withCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications •MotorDrive •BatteryProtection •SynchronousRecti | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •SynchronousRectification(SR)inDC−DCandAC−DC •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Marking：4D0N08；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •SynchronousRectification(SR)inDC−DCandAC−DC •P | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Single N-Channel Field Effect Transistor MOSFET–Power,Single,N-Channel40V,2.0mΩ,150A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Single N-Channel Field Effect Transistor MOSFET–Power,Single,N-Channel40V,2.0mΩ,150A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Single N-Channel Field Effect Transistor MOSFET–Power,Single,N-Channel40V,2.0mΩ,150A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Marking：5C612N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Single N-Channel Field Effect Transistor Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Single N-Channel Field Effect Transistor Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−FreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
详细参数
- 型号：
NTM
- 功能描述：
电源变压器 TRANSFRMER MIC INPUT PCB VERT
- 1：
1 RATIO
- RoHS：
否
- 制造商：
Triad Magnetics
- 功率额定值：
12 VA
- 初级电压额定值：
115 V/230 V
- 次级电压额定值：
12 V/24 V
- 安装风格：
SMD/SMT
- 一次绕组：
Dual Primary Winding
- 二次绕组：
Dual Secondary Winding
- 长度：
2.5 in
- 宽度：
2 in
- 高度：
1.062 in
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
SOIC |
2500 |
全新进口原装现货,价优 |
询价 | ||
ON |
17+ |
QFN |
6200 |
100%原装正品现货 |
询价 | ||
ON |
24+ |
SOP8 |
6980 |
原装现货,可开13%税票 |
询价 | ||
ON |
24+/25+ |
885 |
原装正品现货库存价优 |
询价 | |||
ON |
09+ |
SOP8 |
5500 |
原装无铅,优势热卖 |
询价 | ||
ON |
05+ |
SOP/8 |
455 |
原装现货海量库存欢迎咨询 |
询价 | ||
ON |
06+ |
SO-8 |
2500 |
询价 | |||
ON |
24+ |
SO-8 |
6000 |
进口原装正品假一赔十,货期7-10天 |
询价 | ||
TI |
24+ |
SO-20-5.2 |
2978 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
MOT |
16+ |
SOP |
8000 |
原装现货请来电咨询 |
询价 |
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