MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

功率 MOSFET，40V，4.6A，34mΩ，双 N 沟道，SO-8

NTMD6N04R2G，40V，6.0A，双 N 沟道，SOIC-8 • Designed for use in Low Voltage High Speed switching applications.\n• Low RDS(on)\n• SOIC-8 Surface Mount Package;

ONSEMI

安森美半导体

MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

文件：84.29 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：105.45 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：105.45 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：105.45 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

文件：84.29 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08883 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

ONSEMI

安森美半导体