Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL

Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Low RG • These are Pb−Free Devices* Applications • Refer to Application Note AND8195/D

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ONSEMI

安森美半导体

ON
SO-8 FL

ON

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ON
SO-8FL

ON

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ON
DFN-5

ON

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ON
DFN 5

ON

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