Power MOSFET ??0 V, ??2 A, Single P?묬hannel, TO??20

Power MOSFET −60 V, −12 A, Single P−Channel, TO−220 Features • Low RDS(on) • Rugged Performance • Fast Switching • These are Pb−Free Devices* Applications • Industrial • Automotive • Power Supplies

文件：147.29 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET −60 V, −12 A, Single P−Channel, TO−220 Features • Low RDS(on) • Rugged Performance • Fast Switching • These are Pb−Free Devices* Applications • Industrial • Automotive • Power Supplies

文件：78.56 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

P-Channel 60-V (D-S) MOSFET

文件：951.27 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

文件：124.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 110V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.87 Kbytes 页数：2 Pages

ISC

无锡固电