NTP2955G

Power MOSFET ??0 V, ??2 A, Single P?묬hannel, TO??20

PowerMOSFET −60V,−12A,SingleP−Channel,TO−220 Features •LowRDS(on) •RuggedPerformance •FastSwitching •ThesearePb−FreeDevices* Applications •Industrial •Automotive •PowerSupplies

NTP2955G

Power MOSFET

PowerMOSFET −60V,−12A,SingleP−Channel,TO−220 Features •LowRDS(on) •RuggedPerformance •FastSwitching •ThesearePb−FreeDevices* Applications •Industrial •Automotive •PowerSupplies

NTP2955G

P-Channel 60-V (D-S) MOSFET

NVD2955

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=110V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD2955

PowerMOSFET??0V,??2A,P?묬hannelDPAK

NVD2955

??0V,??2A,P?묬hannelDPAK

PowerMOSFET−60V,−12A,P−ChannelDPAK ThisPowerMOSFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Designedforlow−voltage,high−speedswitchingapplicationsinpowersupplies,converters,andpowermotorcontrols.Thesedevicesareparticularlywellsuite

NVF2955

PowerMOSFET??0V,??.6A,SingleP?묬hannelSOT??23

NVF2955P

PowerMOSFET??0V,??.6A,SingleP?묬hannelSOT??23

PN2955

AtomicEFIInstallKitLS1andLS6,EV1Injector

SFI2955

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=-60V ■LowRDS(ON):0.22Ω(Typ.)