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型号	下载订购	功能描述	制造商上传企业	LOGO
NTMFS4927N	文件：115.24 Kbytes Page：7 Pages	Single N?묬hannel Power MOSFET MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：115.24 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NC	文件：115.24 Kbytes Page：7 Pages	Single N?묬hannel Power MOSFET MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：115.24 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NCT1G	文件：115.24 Kbytes Page：7 Pages	Single N?묬hannel Power MOSFET MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：115.24 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NCT1G	文件：120.9 Kbytes Page：7 Pages	Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：120.9 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NCT3G	文件：120.9 Kbytes Page：7 Pages	Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：120.9 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NCT3G	文件：115.24 Kbytes Page：7 Pages	Single N?묬hannel Power MOSFET MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：115.24 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NT1G	文件：115.24 Kbytes Page：7 Pages	Single N?묬hannel Power MOSFET MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：115.24 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NT1G	文件：120.9 Kbytes Page：7 Pages	Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：120.9 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NT3G	文件：120.9 Kbytes Page：7 Pages	Power MOSFET 30 V, 38 A, Single N?묬hannel, SO?? FL MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：120.9 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NTMFS4927NT3G	文件：115.24 Kbytes Page：7 Pages	Single N?묬hannel Power MOSFET MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free 文件：115.24 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
30
VGS Max (V)：
20
VGS(th) Max (V)：
2.2
ID Max (A)：
38
PD Max (W)：
23.6
RDS(on) Max @ VGS = 4.5 V(mΩ)：
12
RDS(on) Max @ VGS = 10 V(mΩ)：
7.3
Qg Typ @ VGS = 4.5 V (nC)：
34
Qg Typ @ VGS = 10 V (nC)：
16
Ciss Typ (pF)：
913
Package Type：
SO-8FL/DFN-5

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	NTMFS4927N	ON/安森美	23+	DFN	39880	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市联世界科技有限公司	NTMFS4927NCT1G	ON	24+/25+		600	原装正品现货库存价优	询价
齐创科技(上海,北京,青岛)有限公司	NTMFS4927NT1G	MINI	23+	SMT86	5000	原装正品,假一罚十	询价
深圳市毅创腾电子科技有限公司	NTMFS4927NT1G	ON		SOP-8FL	1500	原装长期供货!	询价
深圳市凌旭科技有限公司	NTMFS4927NT1G	ON	2016+	QFN	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市卓越微芯电子有限公司	NTMFS4927NT1G	ON	25+	SO-8FL	9536	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市海天鸿电子科技有限公司	NTMFS4927NCT1G	ON	1701+	?	7500	只做原装进口,假一罚十	询价
深圳市振宏微科技有限公司	NTMFS4927NT1G	ON	23+	NA	20632	专做原装正品,假一罚百!	询价
深圳市纳立科技有限公司	NTMFS4927NT3G		三年内		1983	只做原装正品	询价
深圳市赛芯源科技有限公司	NTMFS4927NCT3G	ON	19+	QFN	16200	原装正品,现货特价	询价

更多NTMFS4927N供应商更新时间2025-10-5 11:10:00

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