Power MOSFET 30 V, 65 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applicat

文件：120.84 Kbytes 页数：7 Pages

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Power MOSFET 30 V, 65 A, Single N?묬hannel, SO?? FL

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 65 A Features • Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant Applicat

文件：120.84 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.06 Kbytes 页数：6 Pages

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安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.06 Kbytes 页数：6 Pages

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安森美半导体

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters

文件：181.55 Kbytes 页数：8 Pages

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安森美半导体

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters

文件：181.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters

文件：181.55 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Recti

文件：138.53 Kbytes 页数：7 Pages

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安森美半导体

丝印：4D0N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Recti

文件：138.53 Kbytes 页数：7 Pages

ONSEMI

安森美半导体