Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single N-Channel Field Effect Transistor

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：124.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，30V，303A，0.9mΩ

Power MOSFET 30 V, 0.9 mΩ, 303 A, Single N−Channel, SO−8FL • Small Footprint (5x6 mm) for Compact Design\n• Low RDS(on) to Minimize Conduction Losses\n• Low QG and Capacitance to Minimize Driver Losses\n• RoHS Compliant;

ONSEMI

安森美半导体