MOSFET - Power, Single N-Channel, STD Gate, SO8FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Recti

文件：138.53 Kbytes 页数：7 Pages

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丝印：4D0N4；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Synchronous Recti

文件：138.53 Kbytes 页数：7 Pages

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安森美半导体

Power, Single N-Channel, T10M, DFN5, STD Gate, SO-8FL 40 V, 4.0 mΩ, 77 A

The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress withou

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安森美半导体

MOSFET - Symmetrical Dual N-Channel

文件：350.72 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET - Symmetrical Dual N-Channel

文件：350.72 Kbytes 页数：9 Pages

ONSEMI

安森美半导体