MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

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丝印：4D0N08；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

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安森美半导体

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 3.5mΩ, 119 A

T10 80V MOSFET is a best-in-class product in 80V market. This product will be a best solution in Cloud power, 5G Telecom, other PSU application, DC/DC and industrial application. And this provide better performance with improved system efficiency and high power density with below performance feature • Low QRR, Soft Recovery Body Diode\n• Low RDS(on) to Minimize Conduction Losses\n• Low QG and Capacitance to Minimize Driver Losses\n• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant;

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安森美半导体

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are

文件：440.67 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are

文件：440.67 Kbytes 页数：8 Pages

ONSEMI

安森美半导体