NTTFSSCH4D0N08XL

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •UltraLowRDS(on)toImproveSystemEfficiency •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandare

NTTFSSCH4D0N08XL

MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, DualCool 33, WDFN9, 80 V, 3.6 mΩ, 107 A;

The latest 80V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.This product is an improved 3x3 source-down Dual cool GEN2 package product, this has better thermal performance than previous 3x3 source down dual cool package with high thermal conductivity mold compound to achieve TC-55°C to +175°C

NTTFSSCH4D0N08XLTWG

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9

Features •ExcellentThermalConductionbyAdvancedSource−DownCenter GateDual−CoolingPackageTechnology(3.3x3.3mm) •UltraLowRDS(on)toImproveSystemEfficiency •LowQGandCapacitancetoMinimizeDrivingandSwitchingLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandare

NTMFS4D0N08X

MOSFET-Power,SingleN-Channel,STDGate,SO8FL80V,3.5m,119A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •SynchronousRectification(SR)inDC−DCandAC−DC •P