MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are

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丝印：4D0；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are

文件：440.67 Kbytes 页数：8 Pages

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安森美半导体

MOSFET - PowerTrench® T10, Single, N-Channel, Source Down, DualCool 33, WDFN9, 80 V, 3.6 mΩ, 107 A

The latest 80V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with g

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安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

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安森美半导体