NTTFSSCH4D0N08XL数据手册ONSEMI中文资料规格书

描述 Description

The latest 80V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.This product is an improved 3x3 source-down Dual cool GEN2 package product, this has better thermal performance than previous 3x3 source down dual cool package with high thermal conductivity mold compound to achieve TC-55°C to +175°C