MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：178.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：5C612N；Package：DFN5；MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：178.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 60 V, 226 A, Single N?묬hannel

文件：82.31 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：79.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：79.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：79.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：79.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET

文件：79.17 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，60V，230A，1.6mΩ

Commercial Power Mosfet in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. • Small footprint (5x6mm)\n• Compact Design\n• Low Rds(on)\n• Minimize Conduction Losses\n• Low Qg and Capacitance\n• Minimize Driver Losses\n• RoHS Compliant;

ONSEMI

安森美半导体